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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB55N06Z/D Advance Information TMOS E-FET.TM High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Capability Specified at Elevated Temperature * Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode * Low Stored Gate Charge for Efficient Switching * Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor-Absorbs High Energy in the Avalanche Mode * ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model. D MTB55N06Z TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 m TM G CASE 418B-02, Style 2 D2PAK S MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Non-Repetitive (tp 10 ms) Drain Current -- Continuous @ TC = 25C Drain Current -- Continuous @ TC = 100C Drain Current -- Single Pulse (tp 10 s) Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C (1) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy -- Starting TJ = 25C (VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size. This document contains information on a new product. Specifications and information herein are subject to change without notice. Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 20 40 55 35.5 165 113 0.91 2.5 - 55 to 150 454 1.1 62.5 50 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C C mJ C/W TJ, Tstg EAS RJC RJC RJA TL C E-FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. REV 1 (c) Motorola TMOS Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MTB55N06Z ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 27.5 Adc) Drain-to-Source On-Voltage (VGS = 10 Vdc) (ID = 55 Adc) (ID = 27.5 Adc, TJ = 125C) Forward Transconductance (VDS = 4.0 Vdc, ID = 27.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (See Figure 8) ( (VDS = 48 Vd , ID = 55 Adc, Vdc, Ad , VGS = 10 Vdc) Vdc, (VDD = 30 Vd ID = 55 Adc, Ad VGS(on) = 10 Vdc Vdc, RG = 9.1 ) ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 55 Adc, VGS = 0 Vdc) (IS = 55 Adc, VGS = 0 Vdc, TJ = 125C) VSD -- -- trr ( (IS = 55 Adc, VGS = 0 Vdc, Ad , Vd , dIS/dt = 100 A/s) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD -- -- LS -- 7.5 -- 3.5 4.5 -- -- nH ta tb QRR -- -- -- -- 0.93 0.82 57 32 25 0.11 1.1 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 27 157 116 126 40 7.0 18 15 54 314 232 252 56 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss -- -- -- 1390 520 119 1950 730 238 pF (Cpk 2.0) VGS(th) 2.0 -- (Cpk 2.0) RDS(on) -- VDS(on) -- -- gFS 12 0.825 0.74 15 1.2 1.0 -- Mhos 14 18 Vdc 3.0 6.0 4.0 -- Vdc mV/C m (Cpk 2.0) V(BR)DSS 60 -- IDSS -- -- IGSS -- -- -- -- 1.0 10 100 nAdc -- 53 -- -- Vdc mV/C Adc Symbol Min Typ Max Unit Reverse Recovery Time 2 Motorola TMOS Power MOSFET Transistor Device Data MTB55N06Z 60 10 V ID , DRAIN CURRENT (AMPS) 50 40 30 20 10 VGS = 4.0 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 9.0 V 8.0 V 7.0 V TJ = 25C 6.0 V ID , DRAIN CURRENT (AMPS) 50 40 30 100C 20 10 25C 60 VDS 10 V 5.0 V TJ = -55C Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics R DS(on) , DRAIN-TO-SOURCE RESISTANCE (m W ) R DS(on) , DRAIN-TO-SOURCE RESISTANCE (m W ) 24 VGS = 10 V 20 TJ = 100C 15.0 TJ = 25C 14.6 14.2 VGS = 10 V 16 25C 12 -55C 8.0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPS) 13.8 15 V 13.4 13.0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current and Temperature R DS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 4. On-Resistance versus Drain Current and Gate Voltage 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 VGS = 10 V ID = 15 A 1000 VGS = 0 V 100 IDSS , LEAKAGE (nA) 125C 100C 10 1.0 TJ = 25C 0.1 0.01 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage Motorola TMOS Power MOSFET Transistor Device Data 3 MTB55N06Z VDS = 0 V 3200 C, CAPACITANCE (pF) Ciss VGS = 0 V VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) 4000 TJ = 25C 12 QT 10 8.0 6.0 4.0 2.0 0 -5.0 VGS 0 VDS 5.0 10 15 20 25 0 4.0 8.0 12 16 20 24 28 32 36 40 QG, TOTAL GATE CHARGE (nC) TJ = 25C ID = 30 A VDS Q1 Q2 VGS 40 32 24 16 8.0 0 48 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2400 Crss 1600 Ciss Coss 800 Crss 0 -10 Q3 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1000 TJ = 25C ID = 30 A VDD = 30 V VGS = 10 V t, TIME (ns) tr tf td(off) 30 TJ = 25C VGS = 0 V 20 100 IS , SOURCE CURRENT (AMPS) 10 100 10 td(on) 10 1.0 RG, GATE RESISTANCE (OHMS) 0 0.5 0.54 0.58 0.62 0.66 0.70 0.74 0.78 0.82 0.86 0.90 0.94 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 VGS = 20 V SINGLE PULSE TC = 25C 10 1.0 ms 10 ms dc 1.0 RDS(on) LIMIT THERMAL LIMIT PACKAGE LMIT 0.1 0.1 1.0 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 ms 10 ms EAS , SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 500 ID = 30 A 400 ID , DRAIN CURRENT (AMPS) 300 200 100 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 4 Motorola TMOS Power MOSFET Transistor Device Data MTB55N06Z 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 t, TIME (seconds) 0.1 1.0 10 Figure 13. Thermal Response PACKAGE DIMENSIONS C E B 4 V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 A 1 2 3 S GATE DRAIN SOURCE DRAIN -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M J DIM A B C D E G H J K S V T CASE 418B-02 ISSUE B Motorola TMOS Power MOSFET Transistor Device Data 5 MTB55N06Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://www.mot.com/SPS/ 6 Motorola TMOS Power MOSFET Transistor MTB55N06Z/D Device Data |
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